ترانزیستور 2N5401

توضیحات

معرفی ترانزیستور 2N5401

Specification

Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO-92

*جهت مشاهده دیتاشیت ترانزیستور 2N5401 کلیک نمایید.