ترانزیستور 2N5551

توضیحات

معرفی ترانزیستور 2N5551

Specification

Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 160 V
Collector- Base Voltage VCBO: 180 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 250 mV
Maximum DC Collector Current: 600 mA
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
Product Type: BJTs – Bipolar Transistors

جهت مشاهده دیتاشیت ترانزیستور 2N5551 کلیک نمایید.