توضیحات
Specification
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 200 mA
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 270 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Series: 2N3904
Continuous Collector Current: 0.2 A
DC Collector/Base Gain hfe Min: 30
DC Current Gain hFE Max: 300
Product Type: BJTs – Bipolar Transistors
نقد و بررسیها
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