ترانزیستور BC557

توضیحات

Specification

Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: PNP
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 0.1 A
Pd – Power Dissipation: 500 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 125 at 2 mA, 5 V
Technology: Si