ترانزیستور BC639

توضیحات

Specification

Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Technology: Si
Configuration: Single
Collector- Emitter Voltage VCEO Max: 80 V
Collector- Base Voltage VCBO: 80 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.5 V
Maximum DC Collector Current: 1 A
Pd – Power Dissipation: 625 mW
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 25 at 5 mA, 2 V
Brand: Diodes Incorporated
Continuous Collector Current: 1 A